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| JMnic Product Specification Silicon PNP Power Transistors 2SA1645 DESCRIPTION With TO-220 package Fast switching speed Low collector saturation voltage APPLICATIONS For use in switching power supplies,DC-DC converters,motor drivers,solenoid drivers, and other low-voltage power supply devices, as well as for high current switching PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25ae PT Total power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 35 150 -55~150 ae ae PWU 300|I s, duty cycleU 10% CONDITIONS Open emitter Open base Open collector VALUE -150 -100 -7 -7 -14 -3.5 1.5 W UNIT V V V A A A JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Collector capacitance CONDITIONS IC=-4A; IB=-0.2A IC=-6A; IB=-0.3A IC=-4A; IB=-0.2A IC=-6A; IB=-0.3A VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-2V IC=-1.5A ; VCE=-2V IC=-4A ; VCE=-2V IC=-1.5A ; VCE=-10V IE=-0 ; VCB=-10V;f=1MHz 100 100 60 150 150 MIN TYP. 2SA1645 SYMBOL VCEsat-1 VCEsat -2 VBE sat -1 VBE sat -2 ICBO IEBO hFE-1 hFE-2 hFE-3 fT COB MAX -0.3 -0.5 -1.2 -1.5 -10 -10 UNIT V V V V |I |I A A 400 MHz pF Switching times ton ts tf Turn-on time Storage time Fall time IC=-4A; IB1=-IB2=-0.2A RL=12.5| ; VCC=-50V 0.3 1.5 0.4 |I |I |I s s s hFE-2 Classifications M 100-200 L 150-300 K 200-400 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1645 Fig.2 Outline dimensions(unindicated tolerance:A 0.10 mm) 3 |
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